... 7A 650V Applications In Switching Supplies And Adaptors 7A, 650V N- TO-220F-3L DESCRIPTION The F7N65...
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... This advanced is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala...
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High ATP113 P-, -60V, -35A, 29.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ...
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NTMFS5C404NLT1G Electronics 8-PowerTDFN Voltage N- FET Type N- Technology (Metal Oxide) Drain to Sourc...
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... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced proce...
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...
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... This advanced is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala...
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... Contact Us High Light: STP45N10F7 Integrated IC Chip , N , 100V N STP45N10F7 N- 100 V 0 ...
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... Single P-CH 20V 9A 8WDFN P- Products Description: 1. -20V,-15A,6.7 Mω, P- 2. P- 20V 9A (Ta) 840mW (Ta) Su...
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... is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet strict quality standards, this is ...
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... MSC750SMA170S Integrated Circuit Chip TO-268-3 Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon...
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... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: ST...
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...
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IRFP260MPBF N - 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : -Single Packaging :Tube Part state: ACTIVE FET t...
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...IC Integrated Circuits Chip N Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 1...
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... for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications: Onboard charger Mainboard Notebook DC-DC ...
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Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {hei...
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... Technology (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds ...
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STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control Features 1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02......
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... may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N- 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P- -40V <45mΩ@VGS=-10V,ID=...
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