... New P-Channel from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per...
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...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...
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... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,...
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... Description: Specifically designed for Automotive applications, these 's in a Dual SO-8 package utilize the...
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... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This utilizes the latest processing ...
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...104A Transistors TO-220AB FETs Transistors N-Channel 180A 200W Through Hole TO-220AB FETs ---IRFB7440PBF 40V 120A IRF...
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... 10A 55V 200W Field - effect tube inverter high - tube Advanced Process Technology Ultra Low On-Resistance Dynamic ...
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...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description...
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...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description...
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... 55V 49A 94W Through Hole TO-220 Description Advanced from International Rectifier utilize advanced processing te...
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... AUIRF8739L2TR 40V Automotive Single N-Channel Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFE...
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... Transistors 55V 110A 8.0mΩ MOSFET Npn Transistor Description Advanced from International Rectifier utilize ...
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... N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status A...
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... based on the national military standard production line, this is designed to meet the stringent requirements of military and industrial app...
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...
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... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...
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... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...
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