hexfet power mosfet

... New P-Channel from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per...

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,...

... Description: Specifically designed for Automotive applications, these 's in a Dual SO-8 package utilize the...

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This utilizes the latest processing ...

...104A Transistors TO-220AB FETs Transistors N-Channel 180A 200W Through Hole TO-220AB FETs ---IRFB7440PBF 40V 120A IRF...

... 10A 55V 200W Field - effect tube inverter high - tube Advanced Process Technology Ultra Low On-Resistance Dynamic ...

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description...

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description...

... in a TO-220AB package Features: Planar cell structure for wide SOA Optimized for broadest availability from distribution partne...

... 55V 49A 94W Through Hole TO-220 Description Advanced from International Rectifier utilize advanced processing te...

... AUIRF8739L2TR 40V Automotive Single N-Channel Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFE...

... Transistors 55V 110A 8.0mΩ MOSFET Npn Transistor Description Advanced from International Rectifier utilize ...

... N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status A...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

... Product Description: High is a type of with high efficiency, which is widely used in applications such as Solar Inverter...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...