power mosfet switch

2SB1316TL Transistor low ] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor b...

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resis...

SUP75N06-08 N-Channel 60V regulator ic List Of Other Electronic Components In Stock MEC5025-NU SMSC MCP73834-FCI/MF MICROCHIP M...

... 4A 650V Applications In Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

... Management Solution For Industrial Applications Features: High is perfect for use in supply applica...

... is a type of field-effect transistor designed for use in high voltage, high applications such as Solar Inverter, High-voltage DC...

... Trench technology for excellent RDS(ON) and low gate charge. It provides superior performance with fast times and low-l...

... loss and low noise Lower RDS(on) characteristic More controllable dv/dt by gate resistance Smaller VGS ringing waveform during swit...

... DESCRIPTION The UTC 10N60K-MTQ is a high voltage designed to have better characteristics, such as fast time, lo...

... 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancement Mode Avalanche...

High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on se...

... also reducing internal capacitance and gate charge for faster and more efficient . Features : 100% avalanche tested Ultra low on-resistan...

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load . Product Summary Absolute Max...

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...

...high side DESCRIPTION Monolithic temperature and overload protected based on technology in a Nominal load current (ISO) ...

... N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum dissipation is 33000 mW. This N channel ...

Module Fourpack Topology A2F12M12W2-F1 SiC MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 pow...

... two N-channel or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...