n channel mosfet switch

IRF530NPBF Power Electronics High Power N Applications FET Type N- Technology (Metal Oxide) Drain to Sou...

... 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power and is designed to have bette...

...IGBT driver based on P-SUB P-EPI process. The floating driver can be used to drive two N- power or IGBT independently which o...

ADUM1201CRZ-RL7 Chipscomponent Electronic Components IC Chip ADUM1201CRZ-RL7 Analog Devices Chip Integrated Circuit New Original SOIC-8_150mil DUAL-CH...

... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......

... TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and P...

... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......

... IRF7103TRPBF N- Product Introduction of Infineon IRF7342TRPBF N- 1. Product Overview Infineon IRF7103342TRPBF is a high...

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load . Product Summary Absolute Max...

... N-CH 30V 195A POWERFLAT N P Manufacturer: STMicroelectronics Product Category: RoHS: Details Technology: Si Mounting ...

... 800V 27A 0.32 Rds Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N- Enhancement Mode A...

... P- 30V 34A 8SOP Optimize Your Notebook Battery Power and Load with Top Quality DMP34M4SPS-13 If you're looking to boost...

... 200V 18A Power Transistor Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...

... with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast High Power Density andamp; Industrial-Grade...

... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N- Number of s: 1 Vds - Dr...

... low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that power are well k...

... transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load...

...maximum voltage rating of 60 volts and current rating of 28 amperes. It is commonly used in power supply circuits and other applications....

... Plastic-Encapsulate DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge an...

High Quality N-Channel MOSFET DFN-5 NTMFS4C09NT1G Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Los...