P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits
Brand Name:Original Brand
Certification:SGS
Model Number:IRLML6402TRPBF
Minimum Order Quantity:100
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CN
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Location:
Shenzhen Guangdong China
Address:
311EF, B Buliding, Zhengzhong Time Square, Longgang District, Shenzhen City, China.
Supplier`s last login times:
within 41 hours
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Product Details
Original P-Channel Mosfet IRLML6402TRPBF/ Integrated Circuit IC
P-Channel
Description:
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
onresistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a Power
MOSFET with the industry's smallest footprint. This package,
, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Feature:
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 50 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 35 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TC = 25°C | Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 560 | mJ |
| IAR | Avalanche Current | 50 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 10 | V/ns |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
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P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits
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