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1 - 20 Results for ir power mosfet from 18063 Products

...+ SOP MAX7400CPA 6943 MAXIM 15+ DIP DP8573AN 1021 NSC 16+ DIP 21094S 1500 16+ SOP F3710S 1500 16+ TO-263 F3205S 1500 14+ TO-263 F5...

Time : Jan,05,2026
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...: EIS Part Number: EIS-LML6346TRPBF Manufacturer Part Number: LML6346TRPBF Manufacturer / Brand: (International Rectifier) Brief Description...

Time : Dec,09,2024
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...: EIS Part Number: EIS-LML6346TRPBF Manufacturer Part Number: LML6346TRPBF Manufacturer / Brand: (International Rectifier) Brief Description...

Time : Dec,09,2024
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STOCK List IP101A 5000 ICPLUS 15+ QFP IR2112 5000 IR 12+ DIP-14 IRFB41N15D 5000 IR 16+ TO-220 KBPC3506 5000 SEP 12+ KBPC KBU808 5000 SEP 16+ KBU-4 L91...

Time : Dec,09,2024
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

Time : Dec,09,2024
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High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

Time : Dec,09,2024
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...5V, 60W, RF module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND   PART NUMBER MFG/BRAND ...

Time : Dec,09,2024
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...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

Time : Dec,09,2024
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IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

Time : Dec,09,2024
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

Time : Dec,09,2024
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

Time : Dec,09,2024
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... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

Time : Jan,08,2026
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

Time : Dec,09,2024
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... loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......

Time : Dec,09,2024
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... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...

Time : Jan,09,2026
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1200V SCTWA50N120 N-Channel Silicon Carbide Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Pow...

Time : Jan,08,2026
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... two N-channel or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to .....

Time : Jan,05,2026
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TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) N-CH 650V 94A T-MAX Product Technical Specifications ...

Time : Nov,18,2025
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Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased density Reduced switching and ...

Time : Dec,09,2024
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... Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel 2. P-channel 20V 9A (Ta) 840mW (Ta) Su...

Time : Dec,09,2024
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