ir power mosfet

...+ SOP MAX7400CPA 6943 MAXIM 15+ DIP DP8573AN 1021 NSC 16+ DIP 21094S 1500 16+ SOP F3710S 1500 16+ TO-263 F3205S 1500 14+ TO-263 F5...

...: EIS Part Number: EIS-LML6346TRPBF Manufacturer Part Number: LML6346TRPBF Manufacturer / Brand: (International Rectifier) Brief Description...

...: EIS Part Number: EIS-LML6346TRPBF Manufacturer Part Number: LML6346TRPBF Manufacturer / Brand: (International Rectifier) Brief Description...

STOCK List IP101A 5000 ICPLUS 15+ QFP IR2112 5000 IR 12+ DIP-14 IRFB41N15D 5000 IR 16+ TO-220 KBPC3506 5000 SEP 12+ KBPC KBU808 5000 SEP 16+ KBU-4 L91...

... based on the national military standard production line, this is designed to meet the stringent requirements of military and industrial app...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

...5V, 60W, RF module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND ...

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

... loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...

1200V SCTWA50N120 N-Channel Silicon Carbide Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Pow...

TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) N-CH 650V 94A T-MAX Product Technical Specifications ...

Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased density Reduced switching and ...