IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching
Certification:new & original
Model Number:IRLL024NTRPBF
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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within 48 hours
Product Details
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Product Details
IRLL024NPbF HEXFET® Power MOSFET
- Surface Mount
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** | 4.4 | A |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* | 3.1 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* | 2.5 | A |
| IDM | Pulsed Drain Current | 12 | A |
| PD @TA = 25°C | Power Dissipation (PCB Mount)** | 2.1 | W |
| PD @TA = 25°C | Power Dissipation (PCB Mount)* | 1.0 | W |
| Linear Derating Factor (PCB Mount)* | 8.3 | mW/°C | |
| VGS | Gate-to-Source Voltage | ± 16 | V |
| EAS | Single Pulse Avalanche Energy | 120 | mJ |
| IAR | Avalanche Current | 3.1 | A |
| EAR | Repetitive Avalanche Energy* | 0.1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Stock Offer (Hot Sell)
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| SS461C | 6348 | HONEYWELL | 16+ | TO-92 |
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| STRX6757 | 2324 | SANKEN | 16+ | TO3P-7 |
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| S30D45C | 2940 | MOSPEC | 16+ | TO-3P |
| SSH40N20 | 17268 | SEC | 16+ | TO-3P |
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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching
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