NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs

Brand Name:onsemi
Model Number:NTMFS5C404NLT1G
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details
NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
181 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12168 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case

The NTMFS5C404NLT1G is an advanced power MOSFET from ON Semiconductor. It is a low-threshold, single N-channel enhancement-mode MOSFET housed in an 8-pin PowerTDFN package. This MOSFET has a maximum drain source voltage of 40V, a maximum drain current of 8A, and a maximum drain-source on-resistance of 4mΩ.

It is designed to operate at a maximum junction temperature of 150°C and can deliver high efficiency power management in a wide range of applications, including DC/DC converters, power supplies, data switches, and motor control. Additionally, this device features low gate charge and low input and output capacitance, making it ideal for use in high-frequency switching applications.

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NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN  Voltage N-Channel Power MOSFETs

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NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs

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