Silicon IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon IC ...
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... M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS S...
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MMBTA43LT1G high voltage High Voltage NPN Silicon ORDERING INFORMATION Device Order...
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M68702H 150-175MHz, 12.5V, 60W, module for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PA...
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Electronic components STPS15L30C-TR STS1DNC45 STV6419AG advantage price for original stock Feature • Enhancement mode – Normally OFF...
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VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-...
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MRF151G is a N-CHANNEL BROADBAND . Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overvie...
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SQ201 SILICON GATE ENHANCEMENT MODE VDMOS Manufacturer: POLYFET Product Category: RoHS: Details Technology:- Mounting Styl...
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... Resistance: Low Rds(ON) Material: Silicon Consumption: Low Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ...
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FDD3672 - High for Advanced Electronics Applications FET Type N-Channel Technology (Metal Oxide) Drain to Source ...
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... Field Effect Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 in D²PAK, TO-220 a...
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Excellent Theramal Stability Amplifier LDMOS FET 28V HF to 2.7GHz...
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... 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET from Packaging: the TO - 263 Ty...
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... , package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: ...
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate ch...
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Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale a...
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Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {...
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... N Channel 500mV 30V AFT05MS003NT1 ,NXP , ,N-Channel,- 500 mV, 30 V, MOSFET,1.8 MHz to 941 ...
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... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output : 18 W Minimum operating temperatu...
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