IRF530NPBF Power Electronics High Power N Applications FET Type N- Technology (Metal Oxide) Drain to Sou...
Add to Cart
... 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power and is designed to have bette...
Add to Cart
...IGBT driver based on P-SUB P-EPI process. The floating driver can be used to drive two N- power or IGBT independently which o...
Add to Cart
... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......
Add to Cart
... TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and P...
Add to Cart
... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......
Add to Cart
...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load . Product Summary Absolute Max...
Add to Cart
... IRF7103TRPBF N- Product Introduction of Infineon IRF7342TRPBF N- 1. Product Overview Infineon IRF7103342TRPBF is a high...
Add to Cart
... N-CH 30V 195A POWERFLAT N P Manufacturer: STMicroelectronics Product Category: RoHS: Details Technology: Si Mounting ...
Add to Cart
... 800V 27A 0.32 Rds Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N- Enhancement Mode A...
Add to Cart
... 200V 18A Power Transistor Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...
Add to Cart
... with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast High Power Density andamp; Industrial-Grade...
Add to Cart
... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N- Number of s: 1 Vds - Dr...
Add to Cart
... low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that power are well k...
Add to Cart
... transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load...
Add to Cart
... Plastic-Encapsulate DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge an...
Add to Cart
... N- Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - ...
Add to Cart
High Quality N-Channel MOSFET DFN-5 NTMFS4C09NT1G Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Los...
Add to Cart
.... Fast . Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power from International Rect...
Add to Cart
High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on se...
Add to Cart