power mosfet model

... based on the national military standard production line, this is designed to meet the stringent requirements of military and industrial app...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

... Circuits 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in supplies, c...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Para...

... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

... loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...

BSS138K N-Channel Enhancement Mode FEATURES 1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V 2. ...

... Transistors, package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: ...

... Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresi...

... Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel 2. P-channel 20V 9A (Ta) 840mW (Ta) Su...

... two N-channel or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to .....