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... for Electronics Applications IRFB3306PBF Parameters: VDS - 100V ID - 30A RDS(on) - 0.0088 ohm Manufacturer: Interna...

... your electronic devices, then the IRFP460LC might be just what you need. This high-performance transistor is ideal for use in a ...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

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... Circuits 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in supplies, c...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Para...

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Motor Driver VNH7100BASTR 4V-28V 16SO with PWM and Power MOSFET #detail_decorate_root .magic-0{border-bottom-style:dashed;border-bottom-color:#fff;fon...

BSS138K N-Channel Enhancement Mode FEATURES 1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V 2. ...

... Transistors, package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: ...

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