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1 - 20 Results for power mosfet buy from 14033 Products

... for Electronics Applications IRFB3306PBF Parameters: VDS - 100V ID - 30A RDS(on) - 0.0088 ohm Manufacturer: Interna...

Time : Dec,09,2024
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... based on the national military standard production line, this is designed to meet the stringent requirements of military and industrial app...

Time : Sep,26,2025
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... Circuits 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in supplies, c...

Time : Dec,09,2024
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

Time : Dec,09,2024
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High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

Time : Dec,09,2024
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IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

Time : Dec,09,2024
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... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

Time : Dec,09,2024
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

Time : Dec,09,2024
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

Time : Dec,09,2024
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... :180 days ! Free shipping: Order over $1000 win a free shipment fee (goods weight below 3Kg) ,during 20130901-20130930 . Why from us >>> Fast ...

Time : Dec,09,2024
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

Time : Dec,09,2024
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...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Para...

Time : Dec,09,2024
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... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

Time : Dec,09,2024
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... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...

Time : Dec,05,2025
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1200V SCTWA50N120 N-Channel Silicon Carbide Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Pow...

Time : Nov,30,2025
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TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) N-CH 650V 94A T-MAX Product Technical Specifications ...

Time : Nov,18,2025
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Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased density Reduced switching and ...

Time : Dec,09,2024
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... Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel 2. P-channel 20V 9A (Ta) 840mW (Ta) Su...

Time : Dec,09,2024
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... in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Conversion an...

Time : Nov,06,2025
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... two N-channel or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to .....

Time : Dec,09,2024
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