BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
Brand Name:Huixin
Certification:ISO9001, ISO4001, IATF16949, UL
Model Number:BSS138K
Minimum Order Quantity:3000pcs
Delivery Time:4-5Weeks
Payment Terms:T/T, MoneyGram
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Dongguan Guangdong China
Address:
Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
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Product Details
BSS138K N-Channel Enhancement Mode Power MOSFET
FEATURES
1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
2. High power and current handing capability
3. Lead free product is acquired
4. Surface mount package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit | ||||||||||
| Drain-Source Voltage | VDS | 50 | V | ||||||||||
| Gate-Source Voltage | VGS | ±20 | V | ||||||||||
| Drain Current-Continuous | ID | 0.22 | A | ||||||||||
| Drain Current-Pulsed (Note 1) | IDM | 0.88 | A | ||||||||||
| Maximum Power Dissipation | PD | 0.35 | W | ||||||||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | ||||||||||
Electrical Characteristics (TA=25℃unless otherwise noted)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | |||||||
| Off Characteristics | |||||||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 50 | 65 | - | V | |||||||
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | - | - | 1 | μA | |||||||
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | - | ±110 | ±500 | nA | |||||||
| VGS=±12V,VDS=0V | - | ±0.3 | ±10 | uA | |||||||||
| On Characteristics (Note 3) | |||||||||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 0.6 | 1.1 | 1.6 | V | |||||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=0.2A | - | 1.3 | 3 | Ω | |||||||
| VGS=10V, ID=0.22A | - | 1 | 2 | Ω | |||||||||
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.2 | - | - | S | |||||||
| Dynamic Characteristics (Note4) | |||||||||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 30 | - | PF | |||||||
| Output Capacitance | Coss | - | 15 | - | PF | ||||||||
| Reverse Transfer Capacitance | Crss | - | 6 | - | PF | ||||||||
| Switching Characteristics (Note 4) | |||||||||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω | - | - | 5 | nS | |||||||
| Turn-on Rise Time | tr | - | - | 5 | nS | ||||||||
| Turn-Off Delay Time | td(off) | - | - | 60 | nS | ||||||||
| Turn-Off Fall Time | tf | - | - | 35 | nS | ||||||||
| Total Gate Charge | Qg | VDS=25V,ID=0.2A, VGS=10V | - | - | 2.4 | nC | |||||||
| Drain-Source Diode Characteristics | |||||||||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=0.22A | - | - | 1.3 | V | |||||||
| Diode Forward Current (Note 2) | IS | - | - | 0.22 | A | ||||||||
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
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