power mosfet amplifier

LM1951T switching ic chip Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high curr...

Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original...

... inverter, and dual-channel . It is commonly used in supplies, motor drives, and audio . This product is highly efficie...

...performance over industry standards like the LM709. They are direct, plug-in replacements for the 709C, LM201, MC1439 and 748 in most applications....

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

.... Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic...

... two N-channel or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to .....

... Product Description: High is a type of with high efficiency, which is widely used in applications such as Solar Inverter...

... your electronic devices, then the IRFP460LC might be just what you need. This high-performance transistor is ideal for use in a ...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

... N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum dissipation is 33000 mW. This N channel ...

High power NPN epitaxial planar bipolar transistor d1047 b817 Product Description Description The device is a NPN transistor manufactured using new Bi...

... Audio , High Output Stereo Switching Description: SD1300K4 is one new range of 4 channel, high output ampli...

IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

... RF 0125-4000MHz 2W 33dBm Microwave for Military Communication The 0125-4000MHz 2W (33dBm) Microwave RF is...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...