p channel mosfet transistor

NTR4003NT1G Power Electronics N- TO-236-3 Solution Switching Amplification Applications FET Type N- Technology ...

FDMS6681Z P-CH 30V 21.1A/49A 8PQFN Original Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z , P-...

...-8(Surface Mount). Specification Of IPBE65R115CFD7A Part Number IPBE65R115CFD7A FET Type N- Technology (Metal Oxide) Drain to Source ...

... CoolMOS™ C7 Product Status Active FET Type N- Technology (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Dra...

IXFK27N80Q N 800V 27A 0.32 Rds Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N- Enhancem...

High-performance N- FQPF10N65C - The Ultimate for All Your Power Needs Introducing the FQPF10N65C, a powerful N- th...

ISO9001.pdf Application: IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications...

Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedd...

... 200V 18A Switching Power Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...

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... , Small Power Switch Enhancement Mode N DESCRIPTION The UTC 12N60-C is a high voltage po...

Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Cur...

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic d...

FDG6321C Chips Diode Integrated Circuits PRODUCT DESCRIPTION SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Produ...

...23-6L Plastic-Encapsulate Dual N- General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS ...

... / Case: VMT-6 Polarity: N-, P- Number of s: 2 Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous D...

... 49V 80A FETs BTS282ZE3230AKSA2 power from Infineon Technologies. Its maximum power dissipation is 300000 mW. In o...

D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-b...

FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23 Features of FDN335N ● TrenchFET Power MOSFET ● Supper high density cell design ...

N MOS IMBG65R039M1HXTMA1 New Parts Product Description Commutation robust fast body diode Reduced sys...