rds on mosfet

... 800V 27A 0.32 Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N-Channel Enhancement Mode Avalanche...

Automotive IGBT Modules FTCO3V455A2 40V 150A Low Rds Automotive MOSFET Module [MJD Advantage] + 15 years experience for electronic components + Secure...

... Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel Function: This N-Channel is a h...

... switching power Features · ► –2.4 A, –20 V. (ON) = 52 mW @ VGS = –4.5 V (ON) = 70 mW @ VGS = –2.5 V (ON) = 100 mW @ VGS = –1...

... Description The 20G04S uses advanced trench technology to provide excellent (ON) and low gate charge . The complementary s may be u...

... Type N-Channel Technology (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (...

...(ON), P-channel The ESN6435 utilizes advanced trench technology s to deliver excellent (ON) and low gate charge. This device is ...

... Plastic-Encapsulate Dual N-Channel General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z (on) < Ω@V = 4.5V 25m GS z ...

...(V) @10V (Typ) (on)(Ω) @10V (max) (on)(Ω) @4.5V(Typ) (on)(Ω) ESD protection for G-S(Y/N) Outline code 2N60 N 600 2.0 ±30 2~4 4.4 TO-220AB:...

...) Drive Voltage (Max On, Min On) 10V On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (......

... switching power Features · ► –2.4 A, –20 V. (ON) = 52 mW @ VGS = –4.5 V (ON) = 70 mW @ VGS = –2.5 V (ON) = 100 mW @ VGS = –1...

... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) (ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.......

... with Ultra-Low 40mandOmega; (on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact...

SOT-23 Plastic-Encapsulate BSS138 N-Channel 50-V(D-S) V(BR)DSS (on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FE...

... (Metal Oxide) Drain to Source Voltage (Vdss) 1500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max On, Min On) 1...

... Tape & Reel (TR) Product Status Active FET Type N-Channel Technology (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous...

IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Techno...

... power transistor NPN A09T n channel transistor Features: Model Number:AO3400 Type: Package Type:Surface Mount Product Name:AO34...

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A On - Drain-Source Res...

...Circuits Chip N Channel Power Product Description Benchmark switching performance (minimum quality factor (on) x Qg and (on) x Qgd) Sp...