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power mosfet operation

1 - 20 Results for power mosfet operation from 143084 Products

... Surface Mount Industrial Transistor Product Description: Our High is designed to in a wide temperature ran...

Time : May,03,2025
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Operational Amplifier Power Mosfet Transistor / general purpose mosfet LM741H , 500 mW General Description The LM741 series are general purpose operat...

Time : Dec,09,2024
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... is a type of field-effect transistor designed for use in high voltage, high applications such as Solar Inverter, High-voltage DC...

Time : Dec,26,2024
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... of only 7.6nC and an on-resistance of only 35mΩ. The is capable of at high current levels, up to 10A, making it well-suited for a...

Time : Dec,09,2024
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

Time : Dec,09,2024
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...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Temperature Fast Switching Fully Avalanche Rated Ease of Para...

Time : Dec,09,2024
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High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

Time : Dec,09,2024
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... N channel transistor in enhancement mode Vishay's SIHF10N40D-E3 maximum dissipation is 33000 mW. This N channel ...

Time : Dec,09,2024
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IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

Time : Dec,09,2024
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... m, 300 A Transistors. Specification Of FDBL9403-F085T6 Part Number FDBL9403-F085T6 Qg - Gate Charge: 108 nC Minimum Temperature: - 55 C ...

Time : Dec,09,2024
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... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

Time : Dec,09,2024
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

Time : Dec,09,2024
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

Time : Dec,09,2024
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

Time : Dec,09,2024
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... Description: Specifically designed for Automotive applications, these HEXFET® 's in a Dual SO-8 package utilize the lastes...

Time : Dec,09,2024
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... 10A 55V 200W Field - effect tube inverter high - tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt R...

Time : Dec,09,2024
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...product is a high voltage, high speed and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive t...

Time : Mar,18,2025
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... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

Time : Dec,09,2024
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... Semiconductors Transistors N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 in D2PAK package App Characteristics Id...

Time : Dec,09,2024
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... Driver - Fully Integrated, Control and Stage Output Configuration Half Bridge (2) Interface On/Off Technology MOSFET Applications Medi...

Time : Dec,09,2024
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