...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Temperature Fast Switching Fully Avalanche Rated Ease of Para...
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...
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High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....
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Ultra Bright Flexible LED Module 4500CD P6.25 Pitch 12V Power Ideal for Curtain Wall Media Facades Model Name XH-QXP-P6.25 Size 250mm*1200mm Average P...
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IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...
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... m, 300 A Transistors. Specification Of FDBL9403-F085T6 Part Number FDBL9403-F085T6 Qg - Gate Charge: 108 nC Minimum Temperature: - 55 C ...
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...
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Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased density Reduced switching and ...
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...
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... Description: Specifically designed for Automotive applications, these HEXFET® 's in a Dual SO-8 package utilize the lastes...
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...product is a high voltage, high speed and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive t...
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... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...
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... (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V...
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... Other customized support OEM, ODM material Other battery warranty 1 Year Accuracy ±0.2%F.S.(full scale)±1digit Unit N(mN, kN), kgf(gf), lbf ...
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... in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Conversion an...
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... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® utilizes the latest processing ...
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... - 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer P...
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... - 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer P...
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS...
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