p enhancement mosfet model

AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resis...

Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Cha...

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Product Description: The Temple Length of these Metal Eyewear Frames measures at 140mm, making them the perfect fit for most face shapes. Additionally...

... Low Power Loss Silicon Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RD...

... Transistor , Small Power Switch Mode N Channel Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSF...

... The RA45H4045MR is a 45-watt RF Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be ...

High Power NVMS5P02 Single P-Channel −Mode Power -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is f...

Signal Power Transistor P Channel Mode BSP315 SIPMOS • P channel • mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-s...

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This assures reliable and robust ...

JY4N8M N Channel Mode Power surface mount for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processi...

DMN26D0UFB4-7 Diodes MODE 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: Techno...

... MODE linear power trench power FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate driv...

... and DMOS technology. This advanced technology has been especially tailored to reduce on-state resistance, and to provide superior switching...

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL MODE POWER Quick Detail: P-CHANNEL MODE POWER Specifications: part ...

FS8205A Dual N-Channel -Mode (20V, 6A) 1.Description This N-Channel 2.5V specified is a rugged gate version of advanced trenc...

... and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features lo...

... with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Efficiency Power Management and Logic Level Gate Drive for Space-Constr...

SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell desi...

20V N+N-Channel Mode DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and opera...