low power mosfet

... Electronic Devices Improved System Efficiency Product Description: Our Voltage boasts of a on-resistance, which is...

MJD122G Complementary Darlington Transistor switching Designed for general purpose amplifier and speed switchi...

Loss SGT Process Application Rds(ON) Energy Storage Field Effect Transistor *, *::before, *::after {box-sizing: border-box; } * {margin:...

1.5uA Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA , Positive Voltage Regulator 1 General Description The ...

...: The IR2104PBF is a high-voltage, high-speed and IGBT driver with independent high and side referenced output channels. This driv...

Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

... 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancement Mode Avalanche...

High Power MOSFET FAN3224TU_F085 Low-Side Gate Drivers, Dual 4-A High-Speed [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-con...

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICA...

...designed for gate control of N-channel, enhancement-mode, used as high-side or -side switches. The MIC5016/7 can sustain an on-sta...

... gate charge, on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

... LDO​ Features ● consumption ● voltage drop ● temperature coefficient ● High input voltage (up to 24V) ● Related product...

... VCESAT TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NP...

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very reverse recovery time. These devices are designed ...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

... the high cell density and reduces the on-resistance with gate charge. These features combine to make this design an extremely efficient and re...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

... Transistors TO-247-3​ Product Description Of MSC750SMA170B MSC750SMA170B is Silicon Carbide N-Channel , Low capacitances a...

... 10A 55V 200W Field - effect tube inverter high - tube Advanced Process Technology Ultra On-Resistance Dynamic dv/dt R...