enhancement mode mosfet

MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor FET Type N-Channel Technology MOSFET (Met...

... Description General Description: The 9435A is the single P-Channel logic power field effect transistors to...

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This assures reliable and robust ...

DMN26D0UFB4-7 Diodes 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: Techno...

... linear power trench power FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate driv...

FS8205A Dual N-Channel (20V, 6A) 1.Description This N-Channel 2.5V specified is a rugged gate version of advanced trenc...

4A 500V 2.1Ω N-Channel Power For Standby Power N-Channel Power Part No.:CS4N50A Package:TO-220F/TO-252...

... The RA45H4045MR is a 45-watt RF Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be ...

Signal Power Transistor P Channel BSP315 SIPMOS • P channel • • Logic Level • VGS(th) = -0.8...-2.0 V Drain-s...

High Power NVMS5P02 Single P-Channel Power -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is f...

JY4N8M N Channel Power surface mount for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processi...

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL POWER Quick Detail: P-CHANNEL POWER Specifications: part ...

JY8N5M N Channel Enhancement Mode Power MOSFET For Switch Mode Power Supply General Description The product utilizes the advanced planar processing te...

Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ packa...

SQ201 SILICON GATE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: RoHS: Details Technology:- Mounting Styl...

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we...

General Description: Features: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resista...

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... and DMOS technology. This advanced technology has been especially tailored to reduce on-state resistance, and to provide superior switching...

20V N+N-Channel DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and opera...