depletion mode mosfet

MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor FET Type N-Channel Technology MOSFET (Met...

... Description General Description: The 9435A is the single P-Channel logic enhancement power field effect transistors to provide exc...

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This assures reliable and robust ...

DMN26D0UFB4-7 Diodes ENHANCE 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: Techno...

... linear power trench power FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 ...

FS8205A Dual N-Channel Enhancement- (20V, 6A) 1.Description This N-Channel 2.5V specified is a rugged gate version of advanced trenc...

​Linear Power Mosfet Transistor 2N5458 JFETs Led Televisions IC Chips JFETs − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Tr...

... Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: 20 V Mi...

... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-So...

Quick Detail: Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS Specifications: Datasheets ICE3B0365JG, ICE3B0...

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement- transistors. Without the gate voltage (VGG...

4A 500V 2.1Ω N-Channel Enhancement Power For Standby Power N-Channel Enhancement Power Part No.:CS4N50A Package:TO-220F/TO-252...

... and DMOS technology. This advanced technology has been especially tailored to reduce on-state resistance, and to provide superior switching...

High Power NVMS5P02 Single P-Channel Enhancement− Power -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is f...

20V N+N-Channel Enhancement DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and opera...

JY16M N Channel 600V TO220F-3 Package Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY16M utilizes the latest trench pro...

Electrical Automatic System Start Mode IG100 150-300 Bar for Performance IG100 uses 100% pressurized nitrogen, which accounts for 78% of the atmospher...

... NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers...

... ) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, m...

Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions:...