IMZC120R012M2HXKSA1

IMZC120R012M2HXKSA1-Datasheet

Typical Applications

- Very low switching losses.

- Overload operation up to T_vj = 200°C.

- Short-circuit withstand time of 2 µs.

- Robust body diode for hard commutation.

- XT interconnection technology for enhanced thermal performance.

The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.

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