FDMC6679AZ RoHS Compliant Mosfet Power Transistor -30V P Channel Power Trench
Brand Name:Ti
Model Number:FDMC6679AZ
Minimum Order Quantity:Contact us
Delivery Time:The goods will be shipped within 3 days once received fund
Payment Terms:Paypal, Western Union, TT
Price:Contact us
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times:
within 48 hours
Product Details
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Product Details
FDMC6679AZ Mosfet Power Transistor MOSFET -30V P-Channel Power Trench
Features
- Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
- Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS(on) GS D
- HBM ESD protection level of 8 kV typical(note 3)
- Extended VGSS range (-25 V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead-free and RoHS Compliant
General Description
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Applications
- Load Switch in Notebook and Server
- Notebook Battery Pack Power Management
FDMC6679AZ RoHS Compliant Mosfet Power Transistor -30V P Channel Power Trench
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