P Channel N Type Transistor , 19P03 D-U-V High Voltage Power Mosfet

P Channel N Type Transistor , 19P03 D-U-V High Voltage Power Mosfet

N Type Transistor Introduction

A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure.

N Type Transistor Feature

-30V/-90A
R DS(ON) = 4.8mΩ(typ.) @V GS = 10V
R DS(ON) = 6.5mΩ(typ.) @V GS = 4.5V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices
Available (RoHS Compliant)

N Type Transistor Applications

Switching application

Power Management for Inverter Systems.

Ordering and Marking Information

D U V
19P03 19P03 19P03
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Package Code
D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code Assembly Material
YYXXX WW G:Halogen Free

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-
Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to
this pr-oduct and/or to this document at any time without notice.

Absolute Maximum Ratings

Note: * Repetitive rating; pulse width limited by max junction temperature.
** Surface mounted on FR-4 board.
*** Limited by T J max , starting T J =25°C , L = 0.3mH, R G = 25Ω, V GS =10V.

Electrical Characteristics (Tc =25°C Unless Otherwise Noted)

Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

Note: *Pulse test; pulse width ≤ 300us,duty cycle ≤ 2%