mos transistor as a switch

... is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, , v...

60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...

..., especially as . Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Field Effect Transis...

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 S...

... 13A 600V 0.33 Ohm N-Channel TOSHIBA Field Effect Silicon N Channel Type Applications Voltage Regulators De...

... performance Trench technology for extremely low RDS (ON) and fast 5. High power and current handling capability 6. 100% RG (gate resista...

...Fast • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING ...

... tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power field effect It is manufactured using Silan Micro...

Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V​ Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon C...

... Field Effect Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Int...

... and high-speed applications such as motor drives, inverters, and power systems. -- A FET ( field-effect ) is a device consisti...

... gate voltages as low as 2.5V. This device is suitable for use as a load or other general applications. Basic data ​1. product model:AO3402 ...

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.3...

... Module 24V NPN / PNP Input Signal For Servo System amplifying plate is non-contact, DC 24V controlled by 5-24V, am...

...: Introducing the High Voltage FET, a -Gate specifically designed for ultra-high voltage applications. This particular device is i...

Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V ga...

... D2PAK Electric Cigarette Machine Parts A is a semiconductor device used to amplify or electronic signals and electrica...

MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Met...

... voltage up to 50V. Realized in BCD mixed technology, the device uses an internal power D- (with a typical RDS(on) of 0.15Ω) to obtai...

...del CH350HV15A-T is a color active matrix thin film (TFT) liquid crystal display (LCD) that uses arphous silicon TFT as a ...