TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

Certification:new & original
Model Number:TK10P60W
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
Contact Now

Add to Cart

Active Member
Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times: within 48 hours
Product Details Company Profile
Product Details

MOSFETs Silicon N-Channel MOS (DTMOS)

TK10P60W


Applications

• Switching Voltage Regulators


Features

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)


Packaging and Internal Circuit


Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)

CharacteristicsSymbolRatingUnit
Drain-source voltageVDSS600V
Gate-source voltageVGSS±30V
Drain current (DC) (Note 1)ID9.7A
Drain current (pulsed) (Note 1)IDP38.8A
Power dissipation (Tc = 25℃)PD80W
Single-pulse avalanche energy (Note 2)EAS121mJ
Avalanche currentIAR2.5A
Reverse drain current (DC) (Note 1)IDR9.7A
Reverse drain current (pulsed) (Note 1)IDRP38.8A
Channel temperatureTch150
Storage temperatureTstg-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note

1: Ensure that the channel temperature does not exceed 150℃. Note

2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A


Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
SKCH28/0638915+MODULE
SKD30/12A163514+MODULE
SKD62/1663813+MODULE
SKDH116/16-L10028716+MODULE
SKDH116/16-L7538313+MODULE
SKHI22AH4R31713+MODULE
SKIIP13NAB065V145814+MODULE
SKIIP22NAB12T1827816+MODULE
SKIIP23NAB126V129014+MODULE
SKIIP24NAB063T1229313+MODULE
SKIIP25AC125V1030216+MODULE
SKIIP32NAB12T160814+MODULE
SKIIP39ANB16V122713+MODULE
SKIIP82AC12IT125116+MODULE
SKIIP82AHB15T126016+MODULE
SKIIP83AC128IST122414+MODULE
SKKD100/1650316+MODULE
SKKD162/1643413+MODULE
SKKD46/1265916+MODULE
SKKE81/12E51514+MODULE
SKKH106/16E20016+MODULE
SKKH57/16E71916+MODULE
SKKT162/16E42516+MODULE
SKKT162/18E39216+MODULE
SKKT210/12E32616+MODULE
SKKT250/14E32916+MODULE
SKKT330/16E29616+MODULE
SKKT430/16E25415+MODULE
SKKT500/18E23616+MODULE
SKKT57/14E59016+MODULE

China TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS supplier

TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

Inquiry Cart 0