RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

Brand Name:MITSUBISHI
Certification:Original Factory Pack
Model Number:RD06HVF1
Minimum Order Quantity:50pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Supplier`s last login times: within 25 hours
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Product Details

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet


DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


FEATURES High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.


RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.


This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)



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China RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet supplier

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

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