mosfet high power

... based on the national military standard production line, this is designed to meet the stringent requirements of military and industrial app...

... for use in switching applications. It features an advanced trench technology and a -cell density cell design to provide improved RDS(ON). The ...

... Technology for Extremely Low RDS(on) • and Current Handling Capability • RoHS Compliant General Description This N-Channel is pr...

IPP65R190CFD7XKSA1 Infineon NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: Technology: Si I...

Internally Clamped, Current Limited N–Channel Logic Level These SMARTDISCRETES devices feature current limiting for short circuit protect...

... Plastic-Encapsulate S DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operat...

...*37 2.45kg OPTO Yes Yes Yes Feature: 1. Design for Air, more functions. 2. Battery voltage from 4S to 120V for super voltage version. 3. Two w...

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS...

FDMA1032CZ 20V Complementary PowerTrench FDMA1032CZ 20V Complementary PowerTrench [Who we are?] Su...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30...

...%typ.on HF Band APPLICATION For output stage of amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PA...

... DC-DC converters Motor control Automotive applications Dual Switch Description: The AP50N10D uses advanced trench technology to provide exc...

... TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint F...

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel or IGBT independently which o...

... and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a ...

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III is...

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for , compared to its predecessor, ...

... Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® from Intern...

... Expansion Board Heating Controller Current Load Module for 3D Printed parts 3D Printer Hot Bed Expansion Board Heating Cont...

... Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ...