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HJ44H11 NPN SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others.
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER | SYMBOL | RATINGS | UNIT | |
Collector- Emitter Voltage | VCEO | 80 | V | |
Collector-Emitter Voltage | VCES | 80 | V | |
Emitter-Base Voltage | VEBO | 5 | V | |
Collector Current | IC | 8 | A | |
Base Current | IB | 5 | A | |
Power Dissipation (TC=25℃) | SOT-223 | PD | 5 | W |
TO-220 | 65 | W | ||
TO-252 | 20 | W | ||
Junction Temperature | TJ | +150 | ℃ | |
Storage Temperature | TSTG | -55~+150 | ℃ |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TYPICAL CHARACTERISTICS
Stock Offer (Hot Sell)
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