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1 - 10 Results for medium power transistor from 26002 Products
Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount
...Medium Power Transistors Product Overview The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power......
Hefei Purple Horn E-Commerce Co., Ltd.
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Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD
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TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor......
ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ......
Angel Technology Electronics Co
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FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000
MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall......
Wisdtech Technology Co.,Limited
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Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors
NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ......
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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