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Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount

China Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount on sale
...Medium Power Transistors Product Overview The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power......
Hefei Purple Horn E-Commerce Co., Ltd.
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Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

China Low Gate Charge Mosfet Power Transistor For Inverter Systems Management on sale
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G

China MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G on sale
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ......
Angel Technology Electronics Co
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FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate

China MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate on sale
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen

FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors

China FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors on sale
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. ​Specification Of FS300R17OE4B81BPSA1 Part Number ......
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

China UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W on sale
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors

China NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors on sale
NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ......
Mega Source Elec.Limited
Verified Supplier
R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

HMC442LC3BTR RF Power Transistor - Great For High Speed Applications

China HMC442LC3BTR RF Power Transistor - Great For High Speed Applications on sale
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

BCX56-16,147 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

China BCX56-16,147 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS on sale
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ......
ChongMing Group (HK) Int'l Co., Ltd
Verified Supplier
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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