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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High...
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Verified Supplier
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor

China 2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor on sale
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Verified Supplier
RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

China BS816A-1  P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor on sale
...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power...
Wisdtech Technology Co.,Limited
Verified Supplier
Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

HMC789ST89ETR RF Power Transistors General Purpose Frequency 700MHz

China HMC789ST89ETR RF Power Transistors General Purpose Frequency 700MHz on sale
...Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor......
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

China 700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With  Integrated ESD Protection on sale
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VBE Technology Shenzhen Co., Ltd.
Verified Supplier
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

Durable Silicon Carbide Semiconductor , Multifunctional High Power Transistor

China Durable Silicon Carbide Semiconductor , Multifunctional High Power Transistor on sale
Reliable High Power Semiconductor with Extremely Low Reverse Recovery Current *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ......
Reasunos Semiconductor Technology Co., Ltd.
Verified Supplier
405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

China N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A on sale
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

Multifunctional Silicon Carbide Semiconductor High Power Transistor SiC MOS

China Multifunctional Silicon Carbide Semiconductor High Power Transistor SiC MOS on sale
Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, ......
Guangdong Lingxun Microelectronics Co., Ltd
Verified Supplier
No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module

China QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module on sale
...HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power......
Mega Source Elec.Limited
Verified Supplier
R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

100V 33A High Power Transistor TO-220-3 IRF540NPBF N Channel

China 100V 33A High Power Transistor TO-220-3 IRF540NPBF N Channel on sale
... than the IRF540NPBF. This high-performance transistor is designed to deliver exceptional results, with a superior design that ensures optimal efficiency and reliability. Featuring a high voltage capability of up to 100V, the IRF540NPBF can operate in a...
Yougou Electronics (Shenzhen) Co., Ltd.
Verified Supplier
Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A
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