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1 - 10 Results for ir power mosfet from 18182 Products
NTTFS3A08PZTAG Transistor IC Chip FETs Single P Channel Power Mosfet 20V 9A 8WDFN
...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power......
Shenzhen Res Electronics Limited
Verified Supplier
B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China
APT94N65B2C3G POWER MOSFET TRANSISTOR
POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET......
Angel Technology Electronics Co
Verified Supplier
FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000
High Power MOSFET Stable Process voltage DC/DC Converter MOSFET High Power DC/DC Converter voltage Stable Process
... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is...
Reasunos Semiconductor Technology Co., Ltd.
Verified Supplier
405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ......
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications....
Shanghai Juyi Electronic Technology Development Co., Ltd
Verified Supplier
No. 1, lane 1199, yunping road, jiading district, Shanghai,China
IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
Mega Source Elec.Limited
Verified Supplier
R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
Verified Supplier
Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1
Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET......
Shenzhen Tengshengda ELECTRIC CO., LTD.
609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong
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