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MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF

China MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF on sale
MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Solar Inverter High Power MOSFET Military Standard Stable High Frequency

China Solar Inverter High Power MOSFET Military Standard Stable High Frequency on sale
...MOSFET Product Description: High Power MOSFET is a type of MOSFET with high efficiency, which is widely used in applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, and Charging Pile. It is a N channel MOSFET with high voltage capabilities, providing high power......
Reasunos Semiconductor Technology Co., Ltd.
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405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET on sale
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET

China IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET on sale
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module

China ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module on sale
RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF......
VBE Technology Shenzhen Co., Ltd.
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Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS

China PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS on sale
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000

N1913A Agilent RF Power Meter Rackmount Kit Microwave Frequency Counter

China N1913A Agilent RF Power Meter Rackmount Kit Microwave Frequency Counter on sale
...RF Power Meter Description of N1913A RF Power Meter Agilent N1913A and N1914A EPM Series power meters offer powerful new features, yet are code compatible with the popular E4418B and E4419B EPM power meters. With a reading rate at twice the speed (E-Series power sensors), flexibility of GPIB, LAN LXI-C or USB connectivity, making average power measurements has never been easier. You can connect two additional U2000 Series power...
Shenzhen Meigaolan Electronic Instrument Co. Ltd
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RA1-B2,F32 of Dongjianghaoyuan, Baomin Rd, Bao'an District, Shenzhen,China

Industrial High Power MOSFET Heat Dissipation Metal Oxide Mosfet

China Industrial High Power MOSFET Heat Dissipation Metal Oxide Mosfet on sale
...Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ±30V, making it perfect for use in high power applications that require reliable and efficient performance. With its high power rating and excellent performance characteristics, the High Power MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
Verified Supplier
No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

FQP30N06 Triple Diffused Npn Hot Sell RF Power Mosfet Transistor FQP30N06

China FQP30N06 Triple Diffused Npn Hot Sell RF Power Mosfet Transistor FQP30N06 on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
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