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1 - 10 Results for rf power mosfet from 48679 Products
MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF
MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
FQA40N25 High Voltage Power Mosfet Electronic Chip Brand New Original TO-3P
FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series ......
Shenzhen Xinshengyuan Electronic Technology Co., Ltd.
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2110 Duhui Xuan, No. 3018 Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen
1200-1400MHz 800W Rack Mounted High Power RF Power Amplifier
...Power RF Power Amplifier The 1200-1400MHz 800W High Power RF Power Amplifier is engineered for demanding RF transmission systems requiring exceptional output power, stability, and continuous-duty performance. Built with advanced LDMOS power devices and an industrial-grade rack-mounted chassis, this amplifier delivers excellent linearity, high efficiency, and long-term reliability for professional RF......
Pinnacle Technology Co., Limited
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IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module
RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF......
VBE Technology Shenzhen Co., Ltd.
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Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000
Bird 4020 Series RF Power Sensor with ±3% Accuracy and NIST-Traceable Calibration for 100 kHz to 3 GHz Applications
...RF Power Sensor ±3% Accuracy CW For Critical RF Application Product Overview Bird's 4020 RF Power Sensor families have set the benchmark for practical reliability and everyday RF power measurement. Supporting continuous wave (CW) signals, the 4020 Series achieves ±3% of reading accuracy ensuring reliable, cost-effective RF power......
Shenzhen Meigaolan Electronic Instrument Co. Ltd
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RA1-B2,F32 of Dongjianghaoyuan, Baomin Rd, Bao'an District, Shenzhen,China
Durable Ampleon BLF9G38-10GU transistor designed for mobile broadband and broadcast RF power systems
... to innovation, Ampleon offers a comprehensive portfolio of LDMOS and GaN RF power transistors designed to meet the demanding requirements of various industries, including mobile broadband, broadcast, industrial, scientific, medical, aerospace, and...
Hefei Purple Horn E-Commerce Co., Ltd.
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Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G ......
ChongMing Group (HK) Int'l Co., Ltd
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
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