Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Brand Name:Original brand
Certification:Original
Model Number:BSZ037N06LS5ATMA1
Minimum Order Quantity:5000pcs
Delivery Time:2-3days
Payment Terms:T/T
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Location: Shenzhen Guangdong China
Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China
Supplier`s last login times: within 48 hours
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Product Details

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel


Features

•OptimizedforhighperformanceSMPS,e.g.syncrec.

•100%avalanchetested •Superiorthermalresistance

•N-channel

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21


Product validation

Fully qualified according to JEDEC for Industrial Application


Categories

Mosfet Power Transistor

BSZ037N06LS5ATMA1
PackageTSDSON-8 FL
SeriseOptiMOS
Leakage Source on-resistance3.7 mOhms
Continuous Leakage Current40A
Pd-Power Dissipation69 W
Vgs th-Gate Source threshold Voltage1.1V
Channel PatternEnhancement



FAQ:


Q. What is your lead time?

A: Most of the products are in-stock so we can send out within 3 days after payment is confirmed. Some special products may need longer time, but please do not worry about that, we will let you know before your order.


Q. What is your warranty?

A: 1200 days after goods have been received. Our products will be 100% tested before they are sent out.


Q. What's the MOQ for your products?

A: We accept small orders from our customers, but it depends on different items so please contact with us.







China Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage supplier

Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

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