CE Silicon Nitride Degassing Rotor
Brand Name:ZG
Certification:CE
Model Number:MS
Minimum Order Quantity:1 piece
Delivery Time:5-8 working days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram, MoneyGram
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Location:
Zhengzhou Henan China
Address:
No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
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within 48 hours
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Silicon Nitride (Si3N4) Degassing Rotor
In order to remove the hydrogen in the aluminum liquid, a hollow silicon nitride rotor is used to feed nitrogen or argon, and the dispersed gas is stirred at a high speed to achieve the neutralization and discharge of hydrogen.
Advantage:
Compared with graphite rotors, silicon nitride will not be oxidized in high temperature environments, so it will not pollute the aluminum liquid and has a longer service life;
- High thermal shock resistance ensures that the rotor will not break during frequent intermittent operation;
The high-temperature strength of silicon nitride is high, which ensures that the rotor runs smoothly at high speeds.
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
CE Silicon Nitride Degassing Rotor
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