FDMA908PZ N Channel Enhancement Mosfet 50V 90A 20mΩ N-Channel MOSFETs
Brand Name:onsemi
Model Number:FDMA908PZ
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
Product Description: FDMA908PZ MOSFET Power Electronics
Parameters:
• Voltages: 8V - 28V
• Package: TO-220
• Maximum Continuous Drain Current: 8A
• Maximum Power Dissipation: 16W
• RDS(on): 0.19 ohm
• Operating Temperature Range: -55°C to +150°C
• Gate Threshold Voltage: 1.9V
• Input Capacitance: 680pF
• Output Capacitance: 200pF
• Fall Time: 61ns
• Rise Time: 52ns
• Drain-Source Breakdown Voltage: 28V
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 12.5mOhm @ 12A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 3957 pF @ 6 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 6-MicroFET (2x2) | |
Package / Case | ||
Base Product Number |
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FDMA908PZ N Channel Enhancement Mosfet 50V 90A 20mΩ N-Channel MOSFETs
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