Mosfet Transistor NVMFS5C646NLWFAFT1G High Performance Ultra Low Voltage FETs
Brand Name:onsemi
Model Number:NVMFS5C646NLWFAFT1G
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
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Product Details
NVMFS5C646NLWFAFT1G MOSFET Power Electronics
Product Description:
The NVMFS5C646NLWFAFT1G is a high-performance MOSFET power electronics device designed to deliver superior power efficiency and reliability. This N-channel MOSFET is suitable for use in a variety of applications, including power conversion, motor control, and signal conditioning. It is constructed with an integrated high-voltage gate and an integrated body diode, enabling its use in high-power applications. With an excellent on-resistance and low gate charge, this device provides superior power efficiency and reliability in a wide variety of systems.
Features:
-High-performance MOSFET power electronics
-Integrated high-voltage gate
-Integrated body diode
-Excellent on-resistance
-Low gate charge
-Wide variety of systems
Applications:
-Power conversion
-Motor control
-Signal conditioning
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case | ||
Base Product Number |
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Mosfet Transistor NVMFS5C646NLWFAFT1G High Performance Ultra Low Voltage FETs
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