Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor
Brand Name:Infineon Technologies
Model Number:SPD08P06PGBTMA1
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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within 38 hours
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Product Details
This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters:
Type: MOSFET Power Electronics
Part Number: SPD08P06PGBTMA1
Voltage: 8 V
Current: 60 A
Voltage Drop: 0.20 V
Package Type: TO-220
RDS(ON): 0.037 Ohms
Pd: 6.75 W
Configuration: Single
Operating Temperature: -55°C to 175°C
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6.2V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 6.2V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 42W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TO252-3 | |
Package / Case | ||
Base Product Number |
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Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor
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