IPD530N15N3GATMA1 Common Power Mosfet 15A 530V N-Channel RoHS Compliant
Brand Name:Infineon Technologies
Model Number:IPD530N15N3GATMA1
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
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Product Details
Infineon IPD530N15N3GATMA1 MOSFET Power Electronics
Product Description:
The Infineon IPD530N15N3GATMA1 is a high-performance power MOSFET, designed to provide superior performance in power electronics applications. This power MOSFET incorporates the latest advanced process technology to provide improved efficiency, low gate charge, fast switching, and improved avalanche performance. This device offers high peak current capability and high temperature operation, making it ideal for use in automotive, industrial, and consumer applications.
Features:
• High peak current capability
• Low gate charge for improved efficiency
• High temperature operation
• Fast switching
• Improved avalanche performance
• High voltage rating
• Low on-resistance
Package Type: TO-247
V(BR)DSS: 530V
RDS(on): 15mOhm
I(D): 30A
Qg: 12nC
Ciss: 1,800pF
Package: TO-247
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | |
Rds On (Max) @ Id, Vgs | 53mOhm @ 18A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 35µA | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 68W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TO252-3 | |
Package / Case | ||
Base Product Number |
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IPD530N15N3GATMA1 Common Power Mosfet 15A 530V N-Channel RoHS Compliant
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