FDMC6679AZ Dual-Channel N-Channel Enhancement Mode MOSFET Power Electronics for High Efficiency Applications

Product Listing:

Product Name: ON Semiconductor FDMC6679AZ N-Channel Power MOSFET

Product Description: The ON Semiconductor FDMC6679AZ N-Channel Power MOSFET is a fully-depleted, low-voltage, high-speed device that is designed to provide superior performance, reliability and low power consumption in a wide range of applications.

Product Features:
• N-Channel
• Low voltage operation
• High speed switching
• Low power consumption
• High current capacity
• High switching frequency
• Low gate charge
• High temperature operation
• Low on-state resistance
• RoHS compliant

Product Specifications:
• Voltage Rating: 20V
• Continuous Drain Current: 27A
• Maximum Drain Source Voltage: -30V
• Drain Source On Resistance: 0.0045Ω
• Gate Threshold Voltage: 2.5V
• Maximum Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package/Case: TO-252

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Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3970 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 41W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN