FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

Brand Name:onsemi
Model Number:FQD17P06TM
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details

N-Channel PowerTrench

P-Channel QFET® MOSFETFQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ
-60 V, -12 A, 135
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-252AA
Package / Case

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especiallytailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.


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China FQD17P06TM  MOSFET Power Electronics  P-Channel QFET -60 V  -12 A 135 mΩ supplier

FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

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