IRF7401TRPBF MOSFET Power Electronics N-Channel 20V Generation V Technology Package 8-SOIC

Generation V Technology
Ultra Low On-Resistance
N-ChannelMosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt RatingFast Switching
Lead-Free

Description:
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.
The SO 8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple die capability making it ideal in a variety of power applications. Withtheseimprovements, multipledevices can be used in an application with dramaticallyreduced board space. The package is designed forvapor phase, infra red, or wave soldering techniques.Power dissipation of greater than 0.8V is possible ina typical PCB mount application.

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	22mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)