FDMC86102 MOSFET Power Electronics Power33 Package N-Channel Shielded Gate 100V 20A 24m
Brand Name:onsemi
Model Number:FDMC86102
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
FDMC86102 MOSFET Power Electronics Power33 Package N-Channel Shielded Gate 100V 20A 24m
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 965 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | Power33 | |
Package / Case |
General Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
• Shielded Gate MOSFET Technology
• Max RDS(on) = 24 m at VGS = 10 V, ID = 7A
• Max RDS(on) = 38 m at VGS = 6 V, ID = 5 A
• Low Profile − 1 mm max in Power 33
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• DC−DC Conversion
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FDMC86102 MOSFET Power Electronics Power33 Package N-Channel Shielded Gate 100V 20A 24m
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