BSS138 MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications
Brand Name:onsemi
Model Number:BSS138
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
BSS138 MOSFET Power Electronics
N-Channel Enhancement Mode Transistor TO-236-3 Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 1.6V @ 250µA | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 27 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 350mW (Ta) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23 |
The BSS138 is a N-channel enhancement mode Field Effect Transistor (FET) housed in a TO-236-3 package. It is specifically designed for low voltage, low current switching applications. The device features an ultra-low on-resistance, fast switching times and a simple drive requirement. It is ideal for applications such as switching and level shifting in consumer, industrial, communication and automotive markets.
This FET offers excellent thermal and electrical characteristics, with a maximum drain-source breakdown voltage of 40V and a maximum continuous drain current of 200mA. This device also features a low gate threshold voltage of 1.8V and a maximum junction temperature of 150°C. The BSS138 is RoHS compliant, making it suitable for lead-free applications.
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BSS138 MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications
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