China Categories
English
1 - 20 Results for ldmos transistor from 365 Products

BLC6G22-75 is a Power . Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Sourc...

Time : Dec,09,2024
Contact Now

Add to Cart

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial...

Time : Dec,09,2024
Contact Now

Add to Cart

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) ...

Time : Dec,09,2024
Contact Now

Add to Cart

#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-we...

Time : Dec,09,2024
Contact Now

Add to Cart

Excellent Theramal Stability Rf Power Amplifier FET 28V HF to 2.7GHz...

Time : Dec,09,2024
Contact Now

Add to Cart

BLP05H635XRY Specifications Part Status Active Type (Dual), Common Source Frequency 108MHz Gain 27dB Voltage - Test 50V Current Ratin...

Time : Dec,09,2024
Contact Now

Add to Cart

... MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power . It is designed for high ga...

Time : Feb,03,2025
Contact Now

Add to Cart

BLF8G20LS-400PV N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF8G20LS-400PV #detail_decorate_root .magic-0{border-bottom-styl...

Time : Dec,09,2024
Contact Now

Add to Cart

... RFP-LD10M Description ThePXAC241702FC is a 28 V FET with an asym metrical design intended for use in multi-standard cellular power...

Time : Dec,09,2024
Contact Now

Add to Cart

Inquiry Cart 0