BSS123L MOSFET Power Electronics Applications TO-236-3 Packaged N-Channel Enhancement Mode Field Effect Transistor

Brand Name:onsemi
Model Number:BSS123L
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details
BSS123L MOSFET Power Electronics Applications
TO-236-3 Packaged N-Channel Enhancement Mode Field Effect Transistor

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
21.5 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3
Package / Case

BSS123L is a N-channel enhancement mode power MOSFET, packaged in the TO-236-3 package. It is designed with low on-resistance and excellent switching performance, making it suitable for a wide range of applications. The MOSFET features an optimized gate charge and improved gate-source voltage threshold, which allows for better control and improved efficiency. It also offers low capacitances, ensuring low switching losses.


The package is compatible with the surface mount process, allowing for easy integration into boards or other applications. This MOSFET is able to handle high current and voltage, making it suitable for high-power applications. It is also RoHS compliant, making it an environmentally friendly and reliable choice.


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China BSS123L MOSFET Power Electronics Applications TO-236-3 Packaged  N-Channel Enhancement Mode Field Effect Transistor supplier

BSS123L MOSFET Power Electronics Applications TO-236-3 Packaged N-Channel Enhancement Mode Field Effect Transistor

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