N-Channel MOSFET Power Electronics - FDMS8025S with Superior Efficiency and Reliability Technology 30 V 24A (Ta)

Product Listing:

FDMS8025S N-Channel Enhancement Mode MOSFET

Manufacturer: ON Semiconductor

Parameters:

• Drain-Source Voltage: -20V

• Continuous Drain Current: -25A

• RDS (on): -25 mOhm

• Power Dissipation: -60W

• Operating Temperature: -55°C to +150°C

• Packaging: -TO-263

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Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerTDFN