FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module
Brand Name:onsemi
Model Number:FDPF33N25T
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 37W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-220F-3 | |
| Package / Case | | |
| Base Product Number |
The FDPF33N25T is a TO-220-3 packaged N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for power switching applications. This device features a low on-state resistance (RDS(ON)) and a fast switching time. It is especially suitable for high-frequency switching applications, with a maximum operating frequency of 5MHz. The gate-source voltage (VGS) range is from -20V to +20V, and the drain-source voltage (VDS) range is from 0V to 25V. The maximum power dissipation is up to 33W, and the maximum drain current (ID) is up to 25A. This device is also RoHS compliant and lead-free, making it an ideal choice for environmental friendly applications.
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FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module
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