NTMS4177PR2G 8-SOIC MOSFET Power Electronics Module P-Channel 30 V 11.4 A

Brand Name:onsemi
Model Number:NTMS4177PR2G
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details

NTMS4177PR2G 8-SOIC MOSFET Power Electronics Module P-Channel 30 V 11.4 A


Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 24 V
FET Feature
-
Power Dissipation (Max)
840mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
8-SOIC
Package / Case

Product Listing:

ON Semiconductor NTMS4177PR2G N-Channel MOSFET Power Electronics


Product Parameters:

• Package: 8-SOIC

• Drain-Source Voltage: 40V

• Drain Current: 34A

• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 34A, 10V

• Gate Charge (Qg) @ Vgs: 15.9nC @ 10V

• Power – Max: 5.6W

• Operating Temperature: -55°C ~ 150°C (TJ)

• Mounting Type: Surface Mount


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China NTMS4177PR2G 8-SOIC MOSFET Power Electronics Module P-Channel   30 V  11.4 A supplier

NTMS4177PR2G 8-SOIC MOSFET Power Electronics Module P-Channel 30 V 11.4 A

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