BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

Brand Name:Diodes Incorporated
Model Number:BS816A-1
Minimum Order Quantity:1pcs
Delivery Time:1day
Payment Terms:T/T, Western Union
Place of Origin:USA
Contact Now

Add to Cart

Verified Supplier
Location: Shenzhen Guangdong China
Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
Supplier`s last login times: within 1 hours
Product Details Company Profile
Product Details

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR RF Transistors

DIODES
Product Category:P-CHANNEL ENHANCEMENT
RoHS:Details
-
16NSOP
Standard
Unit Weight:- oz

This transistor is suitable for RF power amplifiers in various applications such as wireless communication,

broadcasting, and industrial RF equipment.

● P-channel enhancement mode
● DMOS transistor technology
● High power handling capability
● Wide frequency range
● Low noise figure
● High gain
● Good linearity
● Small signal distortion
● RoHS compliant


Features
• High Breakdown Voltage
• High Input Impedance
• Fast Switching Speed
• Specially Suited for Telephone Subsets
• Ideal for Automated Surface Mount Assembly





China BS816A-1  P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor supplier

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

Inquiry Cart 0